当前位置:首页 > News > 

Lattice Power Starts Mass Production of High-power GaN-on-Si LED die

Time:2012-06-12 Source:Point and click:19

Lattice Power has started mass production of its new generation GaN-based high powered LEDs on silicon substrates in June 2012.

Lattice Power is the first and only company in volume production of GaN-on-Silicon LED chips, which is superior to conventional sapphire LEDs.

Operating at a current of 350mA, the 45 mm product is capable of producing 130 lumen cool white with an efficiency of 120 lumens per watt.. What's more, silicon substrates are readily available in larger diameters and come at a fraction of the cost of sapphire substrates, potentially result in substantial cost reductions in the future.

Twenty potential customers have received the LEDs and will incorporate them into their lighting products. Lattice Power's silicon substrate-based LED series includes four different chip sizes: 28mm x 28mm, 35mm x 35mm, 45mm x 45mm, and 55mm x 55mm. Chip power ranges from 0.5W to 2W.

According to some experts’ prediction, future LED chip cost savings could be as much as 70% than current sapphire based LEDs when manufactured on larger diameter silicon substrates. Lattice Power is actively working on 150mm GaN-on-silicon technology and is expecting to transfer its production to even larger diameter silicon substrates in 2013.


下一篇:LatticePower was awarded the top prize of 2015 National Technology Invention 向前已无文章