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Phototransistor screen

Phototransistor

The high sensitivity characteristics of phototransistors are often paired with infrared light-emitting diodes as optical sensors for sensing and switching control. With its rich product line, Crystal Energy can provide products with different structural shapes and performance, which can be applied to both reflection and reflection schemes.

Product advantages

Rich variety

High reliability

High cost-effectiveness


Product features

Miniaturization

High sensitivity

Side sticker/front sticker

Applicable SMT patches


Product Showcase



Product model

Size

(mm)

Response range

(nm)

Peak wavelength(nm)

Collector current(mA)

@Ee=1mW/cm²,

VCE=5V,

λp(nm)= 940nm

Collector dark current(nA)

@Ee=1mW/cm²,

VCE=20V

Upper limit saturation voltage

(V)IC=1mA

Ee=1m W/cm2

Lower limit collective breakdown voltage

(V)IC=0.1mA

Ee=0m W/cm2

Reception perspective

PT172B-L01-3T

2.0×1.25×0.8

740-1100

940

1.5

50

0.4

35

120°

PT970B-L01-4C

2.4×0.6×1.4

740-1100

940

2.0

50

0.4

35

110°

PT953B-L01-2D

3.0×1.2×2.65

740-1100

940

3.0

50

0.4

35

20°


Applications

Microswitch

Position sensor

Infrared application system


Reference

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