Compared with traditional direct LED backlight, Mini LED backlight can realize shorter optical distance(OD) , local dimming in smaller scale, higher color contrast, as well as better brightness uniformity, which can make final products slimmer ,high color rendering and energy saving. While to edge LED backlight,it has simple light guide system and more uniform light distribution, and at the time,final products can both realize light and thin by edge LED backlight and has no border by direct LED backlight.

Micro LED not only reduces the size of LED chips to micron level, but also requires chip technology, transfer technology, repair technology, and drive technology which is completely different from current lighting and backlight LED technology. To meet high yield, high precision, micron size, high integration requirements, Micro LED process development is likely to be unified to IC process. The manufacturing of Micro LED based on GaN-on-Si technology has important advantages, such as high IC process compatibility, large substrate size, low production cost and easy nondestructive stripping of substrates, etc., and has greater potential in the high-density integration with CMOS multifunctional circuit.