On April 11, 2013, the "2013 China LED Industry Health Industry Development Summit Forum and the 5th China LED Industry (2012) Annual Selection and Award Ceremony" was held in Shenzhen. LatticePower' "GaN On Si LED Epitaxial Chip Preparation Technology/Silicon Based High Power Blue Light Chip" won the "2012 China LED Industry Innovation Technology and Product Award".

This selection activity is under the guidance of the Electronic Information Department of the Ministry of Industry and Information Technology, and is jointly organized by China Electronics Daily, China Semiconductor Lighting/LED Industry and Application Alliance, China Optoelectronics Industry Association Optoelectronic Device Branch, and China Optoelectronics Industry Association LED Display Application Branch, targeting Chinese LED enterprises. The selection process involves determining the shortlist of candidates through enterprise self recommendation and association expert recommendation, and ultimately evaluating the award-winning enterprises through evaluation by a jury composed of industry experts. As the "world's first company to mass produce silicon-based high-power LED chips,"  LatticePower has won awards for silicon-based high-power LED blue light chips, fully demonstrating the importance of mass production of silicon-based high-power LED chips for semiconductor lighting. It also once again confirms  LatticePower' global leading position in the research and development and manufacturing of silicon-based LED chips.

Last year,  LatticePower launched four silicon based high-power LED chips, including 28 * 28mil, 35 * 35mil, 45 * 45mil, and 55 * 55mil. Among them, the luminous efficiency of the 45mil silicon based high-power LED chip has been improved to 130lm/W. After packaging, the blue light power of the product can reach 615mW, the white light flux can reach 145lm, and the luminous efficiency of the 55mil silicon based high-power LED chip can reach 140lm/W.

 LatticePower has always attached great importance to research and innovation, and has core competitiveness in silicon based LED technology. Its silicon based gallium nitride LED material and device technology is a disruptive new technology that rewrites the history of semiconductor lighting, with original technological property rights. In addition to sapphire and silicon carbide substrates, it has formed the third semiconductor lighting technology route. We have applied for 207 international and domestic patents for silicon substrate LED chip technology, including 32 PCT patents. We have also applied in countries or regions such as the United States, the European Union, Japan, and South Korea, forming the only LED lighting company in China that has vertically integrated IP patents.

Currently, the chips produced by the silicon based LED technology of  LatticePower have the following three major advantages:

（1） Having original intellectual property rights, products can be sold to the international market without being restricted by international patents;

（2） Has excellent performance: device has good heat dissipation, can work under high current density, good anti-static performance, long lifespan, and good spot shape;

（3） The device packaging process is simple, with a vertical structure chip, suitable for direct coating of fluorescent powder, saving packaging costs.

The first mass production of silicon based LED chips with independent intellectual property rights by  LatticePower globally has realized the dream of Chinese LED chips. Based on this, Crystal Energy Optoelectronics will make further contributions to the rapid development of LED lighting through further technological improvement and capacity expansion.