On August 9, 2022, the third generation semiconductor cutting-edge trend seminar of Jibang Consulting was successfully concluded. This conference mainly discusses the application trends and advantages of third-generation semiconductor materials such as GaN/SiC, as well as the development status, bottlenecks faced, and directions for technological breakthroughs in the third-generation semiconductor industry.

LatticePower shared a report titled "Research Progress in Silicon Based Gallium Nitride Micro LED Epitaxy and Devices" with epitaxial process manager Zhou Mingbing. The report points out that Micro LED, as the "ultimate display technology", will have a market of hundreds of billions in the future and will be widely used in AR, HUD, automotive lighting and display, wearable devices, and other fields that require high resolution, high brightness, and high contrast.

At present, the industrialization of Micro LED still faces challenges in key technologies and costs, including red light efficiency, massive transfer, wafer bonding, and full color processing. There is an urgent need to improve yield and optimize detection and repair technologies.

From the perspective of industrialization, using large-sized silicon substrate GaN technology to prepare Micro LEDs has many advantages such as low cost, high yield, non-destructive silicon removal, low warping, CMOS compatibility, and so on.

Compared to a 4-inch substrate, an 8-inch substrate increases the output of Micro LED chips per unit substrate area by 25%. Using an 8-inch silicon substrate to prepare Micro LEDs, the BOM cost of each display module is only 30% of that of the 4-inch sapphire solution (including epitaxial, chip, and CMOS).

The industrialization of Micro LED requires high yield IC like processes, and the GaN technology on silicon substrates of 8 inches and above is an important way to achieve compatibility between Micro LED preparation and silicon IC processes.

Red light efficiency is one of the key bottlenecks faced by Micro LED technology. The existing AlInGaP red light LED materials have poor mechanical properties, and the sidewall effect causes a sharp decrease in EQE. InGaN based red light Micro LEDs are considered an important solution to break through the red light bottleneck. Crystal Energy Optoelectronics has achieved preliminary results in the development of InGaN red LED. On a 36mil chip sample, the EQE is 2.7% at a current density of 1A/cm2, with a peak wavelength of 670nm and a luminescence half width less than 60nm.

LatticePower has leading silicon substrate LED technology and is a silicon substrate LED production enterprise with large-scale production and manufacturing capabilities. The company's silicon substrate LED industry chain covers epitaxy, chips, devices, and modules, and has developed high light efficiency, high yield, and large-sized GaN based LED epitaxial wafers with near ultraviolet, red, green, and blue silicon substrates, and successfully prepared three primary color GaN Micro LED display arrays.

In the future,LatticePower will leverage the advantages of silicon substrate GaN technology and a complete industrial chain, collaborate with industry colleagues to break the bottleneck of materials and technology, and jointly promote the development of Micro LED industry.