LatticePower, which has been dedicated to researching silicon based LEDs for a long time, recently demonstrated high-power InGaN LEDs based on silicon substrates, which are said to have performance similar to LEDs grown on traditional substrates.

LatticePower has long been committed to the development of GaN on Si MOCVD growth technology. The company's headquarters is located in Nanchang, Jiangxi. This demonstration is a cold white LED with a light output of over 100 lumens at a current of 350mA, using a 1x1mm chip.

At present, the vast majority of LED production is achieved by depositing multiple layers of GaN thin films on a sapphire or silicon carbide substrate. Crystal Energy believes that LED grown on silicon substrate will have greater potential in cost savings and control, and its performance is no less than that of LED produced by traditional processes.

LatticePower has received over $50 million in investments from multiple venture capital funds in the United States, Taiwan, and Singapore, including Mayfield, GSR Ventures, Asiavest, and Tomasek. The company's small size tube core (200 micron) currently used in the display field has entered the mass production stage.

The latest research and development results of 1x1mm chips will be announced at the 8th International Nitride Semiconductor Conference, which will be held on Jeju Island, South Korea from October 18-23, 2009.

The results describe a high-power, Flip Chip, Vertical Injection thin film blue and white InGaN/GaN LED grown on a silicon substrate (111).